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Specifications | mean on state current | VDRM | surge current | VTM | IDRM | trigger current | trigger voltage | crust thermal resistance |
A | V | A | V | mA | mA | V | ℃/W | |
MTC60GK16 | 60 | 1800 | 1600 | ≤1.5 | ≤3 | 30~100 | 0.5~2 | 0.54 |
MFC60GK16 | 60 | 1800 | 1600 | ≤1.5 | ≤3 | 30~100 | 0.5~2 | 0.54 |
MTC60GK16 | 100 | 1800 | 1600 | ≤1.5 | ≤3 | 30~100 | 0.5~2 | 0.4 |
MFC60GK16 | 100 | 1800 | 1800 | ≤1.5 | ≤3 | 30~100 | 0.5~2 | 0.4 |
MTC60GK16 | 125 | 1800 | 2300 | ≤1.5 | ≤3 | 30~100 | 0.5~2 | 0.25 |
MFC60GK16 | 125 | 1800 | 2300 | ≤1.5 | ≤3 | 30~100 | 0.5~2 | 0.25 |
MTC60GK16 | 175 | 1800 | 4000 | ≤1.5 | ≤5 | 30~100 | 0.5~2 | 0.18 |
MFC60GK16 | 175 | 1800 | 4000 | ≤1.5 | ≤5 | 30~100 | 0.5~2 | 0.18 |
MTC60GK16 | 200 | 1800 | 7200 | ≤1.8 | ≤5 | 30~100 | 0.5~2 | 0.14 |
MFC60GK16 | 200 | 1800 | 7200 | ≤1.8 | ≤5 | 30~100 | 0.5~2 | 0.14 |
MTC60GK16 | 250 | 1800 | 8500 | ≤1.8 | ≤10 | 30~100 | 0.5~2 | 0.12 |
MFC60GK16 | 250 | 1800 | 8500 | ≤1.8 | ≤10 | 30~100 | 0.5~2 | 0.12 |
MTC60GK16 | 300 | 1800 | 9200 | ≤1.8 | ≤10 | 30~100 | 0.5~2 | 0.1 |
MFC60GK16 | 300 | 1800 | 9200 | ≤1.8 | ≤10 | 30~100 | 0.5~2 | 0.1 |
MTC60GK16 | 400 | 1800 | 12600 | ≤2 | ≤20 | 30~100 | 0.5~2 | 0.082 |
MFC60GK16 | 400 | 1800 | 12600 | ≤2 | ≤20 | 30~100 | 0.5~2 | 0.082 |
DBC Ceramic Copper Clad Laminate. |
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Stronger current-carrying, bare-chip soldering. |
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Faster heat dissipation, imported technology. |
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Product selection: MTC60GK16 full control module, MFC60GK16 half control module. |
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Usage occasions: Instrument direct trigger or special trigger trigger phase and zero heating. |
MT Thyristor Semiconductor Module is the abbreviation of Thyristor Rectifier Element, which is a hig...
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